SILICON CARBIDE PRESSURE SENSORS AND INFRA-RED EMITTERS

A variety of harsh-environment and high demanding
applications are gaining emphasis in Micro Electro-
Mechanical System (MEMS) recently, such as locations
of high temperatures, high oxidizing/corrosive
environments, strong vibrations, and high radiation.
Limitations of Si-based micro-systems for these
applications are obvious. Package size and cost also
become substantial when the devices have to be
sufficiently isolated from the environmental
harshness. Thus, an enabling platform material has
to be sought to meet requirements from both
operation condition and cost reduction. Silicon
Carbide (SiC) is exceptionally well suited for these
applications, which has motivated author to pursue
the development of this platform material for MEMS
and, more particularly in this work, high
temperature pressure sensors and IR emitters. This
work provides details of research prototypes
developed with end-application in mind, and is
especially useful to engineering professionals in
industry and researchers in academia in micro sensor
fields, or any entrepreneur and venture capitalist
who may be considering business opportunities in the
target market addressed.