Multi-run Memory Tests for Pattern Sensitive Faults
HC runder Rücken kaschiert
Lieferzeit: Print on Demand - Lieferbar innerhalb von 3-5 Werktagen I
ISBN-13:
9783319912035
Veröffentl:
2018
Einband:
HC runder Rücken kaschiert
Erscheinungsdatum:
18.07.2018
Seiten:
148
Autor:
Ireneusz Mrozek
Gewicht:
395 g
Format:
241x160x14 mm
Sprache:
Englisch
Beschreibung:
This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.
- Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process;
- Presents practical algorithms for design and implementation of efficient multi-run tests;
- Demonstrates methods verified by analytical and experimental investigations.
Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process
Introduction to digital memory.- Basics of functional RAM testing.- Multi-cell faults.- Controlled random testing.- Multi-run tests based on background changing.- Multi-run tests based on address changing.- Multiple controlled random testing.- Pseudo exhaustive testing based on march tests.- Conclusion.