Radio-Frequency Integrated-Circuit Engineering

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Gewicht:
2439 g
Format:
286x221x51 mm
Beschreibung:
Die Technologie komplementärer Metalloxid-Halbleiter (Complementary Metal-Oxide Semiconductor, CMOS) kommt bei der Fertigung integrierter Schaltkreise zum Einsatz. In diesem Fachbuch werden Theorie, Analyse, Eigenschaften (Hochfrequenz/Hochgeschwindigkeit) und Anwendungen von Leiterplatten-Übertragungsleitungen, die in integrierten Schaltkreisen und Systemen verwendet werden, ausführlich behandelt. Weitere Themen sind Anwendungen in allen Bereichen der Hochfrequenztechnik, einschließlich drahtlose Kommunikation, Optik und Computer. Das Fachbuch ist durch das Lösungshandbuch ideal für Studenten im höheren Grundstudium, Ingenieure für Hochfrequenz-Mikrowellentechnik, Optikingenieure, Ingenieure für Festkörperbauelemente und für Computeringenieure.
This book examines the design of RFICs at both low and high microwave frequencies reaching hundreds of GHz beyond those in the traditional RF spectrum RadioFrequency IntegratedCircuit Engineering addresses the theory, analysis and design of passive and active RFIC's using Sibased CMOS and BiCMOS technologies, and other nonsilicon based technologies. The materials covered are selfcontained and presented in such detail that allows readers with only undergraduate electrical engineering knowledge in EM, RF, and circuits to understand and design RFICs. Organized into sixteen chapters, blending analog and microwave engineering, RadioFrequency IntegratedCircuit Engineering emphasizes the microwave engineering approach for RFICs. * Provides essential knowledge in EM and microwave engineering, passive and active RFICs, RFIC analysis and design techniques, and RF systems vital for RFIC students and engineers. * Blends analog and microwave engineering approaches for RFIC design at high frequencies. * Includes problems at the end of each chapter. Radio-Frequency Integrated-Circuit Engineering serves as a textbook for senior undergraduate and graduate students, as well as a reference book for practicing RFIC and microwave engineers. Cam Nguyen, PhD, IEEE Fellow, is the Texas Instruments Endowed Professor of Electrical and Computer Engineering at Texas A&M University. He was Program Director at the National Science Foundation during 2003-2004, responsible for research programs in RF and wireless technologies. Over the past 35 years, including 12 years at TRW, Martin Marietta, Aeroject ElectroSystems, Hughes Aircraft and ITT Gilfillan, Professor Nguyen has led numerous RF projects for wireless communications, radar and sensing; developed many RF integrated circuits and systems up to 220 GHz; published five books, six book chapters, over 255 papers; and given more than 160 conference presentations.
PREFACE xvii
 
1 INTRODUCTION 1
 
Problems 5
 
2 FUNDAMENTALS OF ELECTROMAGNETICS 6
 
2.1 EM Field Parameters 6
 
2.2 Maxwell's Equations 7
 
2.3 Auxiliary Relations 8
 
2.4 Sinusoidal Time-Varying Steady State 9
 
2.5 Boundary Conditions 10
 
2.6 Wave Equations 12
 
2.7 Power 13
 
2.8 Loss and Propagation Constant in Medium 14
 
2.9 Skin Depth 16
 
2.10 Surface Impedance 17
 
Problems 19
 
3 LUMPED ELEMENTS 20
 
3.1 Fundamentals of Lumped Elements 20
 
3.2 Quality Factor of Lumped Elements 28
 
3.3 Modeling of Lumped Elements 30
 
3.4 Inductors 32
 
3.5 Lumped-Element Capacitors 60
 
3.6 Lumped-Element Resistors 72
 
References 75
 
Problems 76
 
4 TRANSMISSION LINES 85
 
4.1 Essentials of Transmission Lines 85
 
4.2 Transmission-Line Equations 86
 
4.3 Transmission-Line Parameters 93
 
4.4 Per-Unit-Length Parameters R,L,C, and G 97
 
4.5 Dielectric and Conductor Losses in Transmission Lines 107
 
4.6 Dispersion and Distortion in Transmission Lines 111
 
4.7 Group Velocity 115
 
4.8 Impedance, Reflection Coefficients, and Standing-Wave Ratios 117
 
4.9 Synthetic Transmission Lines 126
 
4.10 Tem and Quasi-Tem Transmission-Line Parameters 128
 
4.11 Printed-Circuit Transmission Lines 132
 
4.12 Transmission Lines in RFICs 144
 
4.13 Multi-Conductor Transmission Lines 152
 
References 173
 
Problems 174
 
Appendix 4: Transmission-Line Equations Derived From Maxwell's Equations 182
 
5 RESONATORS 186
 
5.1 Fundamentals of Resonators 186
 
5.2 Quality Factor 189
 
5.3 Distributed Resonators 205
 
5.4 Resonator's Slope Parameters 231
 
5.5 Transformation of Resonators 231
 
References 237
 
Problems 238
 
6 IMPEDANCE MATCHING 244
 
6.1 Basic Impedance Matching 244
 
6.2 Design of Impedance-Matching Networks 248
 
6.3 Kuroda Identities 262
 
References 266
 
Problems 266
 
7 SCATTERING PARAMETERS 271
 
7.1 Multiport Networks 271
 
7.2 Impedance Matrix 273
 
7.3 Admittance Matrix 274
 
7.4 Impedance and Admittance Matrix in RF Circuit Analysis 274
 
7.5 Scattering Matrix 279
 
7.6 Chain Matrix 293
 
7.7 Scattering Transmission Matrix 294
 
7.8 Conversion Between Two-Port Parameters 295
 
References 298
 
Problems 298
 
8 RF PASSIVE COMPONENTS 304
 
8.1 Characteristics of Multiport RF Passive Components 304
 
8.2 Directional Couplers 311
 
8.3 Hybrids 326
 
8.4 Power Dividers 339
 
8.5 Filters 345
 
References 371
 
Problems 372
 
9 FUNDAMENTALS OF CMOS TRANSISTORS FOR RFIC DESIGN 379
 
9.1 MOSFET Basics 379
 
9.2 MOSFET Models 386
 
9.3 Important MOSFET Frquencies 407
 
9.4 Other Important MOSFET Parameters 409
 
9.5 Varactor Diodes 409
 
References 412
 
Problems 412
 
10 STABILITY 418
 
10.1 Fundamentals of Stability 418
 
10.2 Determination of Stable and Unstable Regions 421
 
10.3 Stability Consideration for N-Port Circuits 427
 
References 427
 
Problems 428
 
11 AMPLIFIERS 430
 
11.1 Fundamentals of Amplifier Design 430
 
11.2 Low Noise Amplifiers 443
 
11.3 Design Examples 451
 
11.4 Power Amplifiers 455
 
11.5 Balanced Am

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